9N90B Datasheet and Replacement
Type Designator: 9N90B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PB
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9N90B Datasheet (PDF)
9n90b 9n90c.pdf

RoHS 9N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET9A, 900VoltsDESCRIPTIOND The Nell 9N90 is a three-terminal silicon devicewith current conduction capability of 9A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GGD
9n90b.pdf

9N90B9A 900V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 900Vplanar technology which reduce the conduction loss, improve switchingI = 9.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 920m2 Features Fast switching ESD impr
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: TMP830 | IRFS151 | IRFR420A | SHD224802 | IRF7749L2TRPBF | 2SK3342 | IRFM1310ST
Keywords - 9N90B MOSFET datasheet
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History: TMP830 | IRFS151 | IRFR420A | SHD224802 | IRF7749L2TRPBF | 2SK3342 | IRFM1310ST



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