9N90B Datasheet and Replacement
Type Designator: 9N90B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PB
9N90B substitution
9N90B Datasheet (PDF)
9n90b 9n90c.pdf

RoHS 9N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET9A, 900VoltsDESCRIPTIOND The Nell 9N90 is a three-terminal silicon devicewith current conduction capability of 9A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GGD
9n90b.pdf

9N90B9A 900V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 900Vplanar technology which reduce the conduction loss, improve switchingI = 9.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 920m2 Features Fast switching ESD impr
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED
Datasheet: 8N60H , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , AO3407 , 9N90C , AMA2N7002 , AMA410N , AMA420N , AMA421P , AMA423P , AMA430N , AMA433P .
History: RSH070N05 | 2SK1650 | R6011KNX | TPCP8402
Keywords - 9N90B MOSFET datasheet
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History: RSH070N05 | 2SK1650 | R6011KNX | TPCP8402



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