AUIRFR120ZTRL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFR120ZTRL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 6.9 nC
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 41 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO-252
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AUIRFR120ZTRL Datasheet (PDF)
auirfr120ztrl.pdf
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PD - 97683AUTOMOTIVE GRADEAUIRFR1010ZHEXFET Power MOSFETFeaturesDVDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ.5.8m 175C Operating Temperature max. 7.5mG Fast SwitchingID (Silicon Limited) 91A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)S 42A Lead-Free, RoHS Compliant Automotive Qualifie
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AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918