AUIRFR120ZTRL Specs and Replacement

Type Designator: AUIRFR120ZTRL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-252

AUIRFR120ZTRL substitution

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AUIRFR120ZTRL datasheet

 ..1. Size:309K  international rectifier
auirfr120ztrl.pdf pdf_icon

AUIRFR120ZTRL

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall... See More ⇒

 4.1. Size:309K  international rectifier
auirfu120z auirfr120z.pdf pdf_icon

AUIRFR120ZTRL

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall... See More ⇒

 7.1. Size:242K  international rectifier
auirfr1010z.pdf pdf_icon

AUIRFR120ZTRL

PD - 97683 AUTOMOTIVE GRADE AUIRFR1010Z HEXFET Power MOSFET Features D VDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ. 5.8m 175 C Operating Temperature max. 7.5m G Fast Switching ID (Silicon Limited) 91A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) S 42A Lead-Free, RoHS Compliant Automotive Qualifie... See More ⇒

 7.2. Size:619K  infineon
auirfr1018e.pdf pdf_icon

AUIRFR120ZTRL

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175 C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu... See More ⇒

Detailed specifications: AUIRFN8401, AUIRFN8403, AUIRFN8405, AUIRFN8458, AUIRFN8459, AUIRFP2602, AUIRFP4409, AUIRFP4568-E, IRFZ44N, AUIRFR2307ZTR, AUIRFR2607ZTR, AUIRFR2905ZTR, AUIRFR3504ZTR, AUIRFR3710ZTRL, AUIRFR4104TR, AUIRFR4105TR, AUIRFR4105ZTR

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.