AUIRLR2905TR Todos los transistores

 

AUIRLR2905TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLR2905TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 84 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO-252

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AUIRLR2905TR datasheet

 ..1. Size:238K  international rectifier
 auirlr2905tr.pdf pdf_icon

AUIRLR2905TR

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive D V(BR)DSS Low On-Resistance 55V Dynamic dV/dT Rating RDS(on) max. 27m 175 C Operating Temperature G Fast Switching ID 42A S Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Autom

 4.1. Size:273K  international rectifier
 auirlr2905ztr.pdf pdf_icon

AUIRLR2905TR

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automot

 4.2. Size:660K  infineon
 auirlr2905z.pdf pdf_icon

AUIRLR2905TR

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc

 5.1. Size:230K  international rectifier
 auirlr2908.pdf pdf_icon

AUIRLR2905TR

PD - 97734 AUTOMOTIVE GRADE AUIRLR2908 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Logic-Level Gate Drive 80V l Low On-Resistance RDS(on) typ. 22.5m l 175 C Operating Temperature max 28m l Fast Switching G l Fully Avalanche Rated ID (Silicon Limited) 39A l Repetitive Avalanche Allowed S ID (Package Limited) 30A up to Tjmax l Lead-Free,

MOSTRAR MÁS

Otros transistores... AUIRL1404ZSTRL , AUIRL3705ZSTRL , AUIRL7732S2TR1 , AUIRL7736M2TR , AUIRL7766M2TR , AUIRLL024Z , AUIRLR024NTR , AUIRLR2703TR , STP80NF70 , AUIRLR2905ZTR , AUIRLR3410TRL , AUIRLR3705ZTR , AUIRLS3114Z , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS .

History: IXFC14N80P

 

 

 

 

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