AUIRLR2905TR Datasheet. Specs and Replacement

Type Designator: AUIRLR2905TR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO-252

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AUIRLR2905TR datasheet

 ..1. Size:238K  international rectifier
 auirlr2905tr.pdf pdf_icon

AUIRLR2905TR

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive D V(BR)DSS Low On-Resistance 55V Dynamic dV/dT Rating RDS(on) max. 27m 175 C Operating Temperature G Fast Switching ID 42A S Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Autom... See More ⇒

 4.1. Size:273K  international rectifier
 auirlr2905ztr.pdf pdf_icon

AUIRLR2905TR

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automot... See More ⇒

 4.2. Size:660K  infineon
 auirlr2905z.pdf pdf_icon

AUIRLR2905TR

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc... See More ⇒

 5.1. Size:230K  international rectifier
 auirlr2908.pdf pdf_icon

AUIRLR2905TR

PD - 97734 AUTOMOTIVE GRADE AUIRLR2908 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Logic-Level Gate Drive 80V l Low On-Resistance RDS(on) typ. 22.5m l 175 C Operating Temperature max 28m l Fast Switching G l Fully Avalanche Rated ID (Silicon Limited) 39A l Repetitive Avalanche Allowed S ID (Package Limited) 30A up to Tjmax l Lead-Free, ... See More ⇒

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Detailed specifications: AUIRL1404ZSTRL, AUIRL3705ZSTRL, AUIRL7732S2TR1, AUIRL7736M2TR, AUIRL7766M2TR, AUIRLL024Z, AUIRLR024NTR, AUIRLR2703TR, AON7410, AUIRLR2905ZTR, AUIRLR3410TRL, AUIRLR3705ZTR, AUIRLS3114Z, AUIRLSL4030, AUIRLU024Z, AUIRLZ24NL, AUIRLZ24NS

Keywords - AUIRLR2905TR MOSFET specs

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