BUZ172 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 172SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 172 -100 V -5.5 A 0.6 TO-220 AB C67078-S1451-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C -5.5Pulsed drain current IDpulsTC = 25 C -22Avalanche energy, single pulse EAS

Isc P-Channel MOSFET Transistor BUZ172FEATURESWith TO-220 packageLow input capacitance and gate chargesLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

BUZ 171SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 171 -50 V -8 A 0.3 TO-220 AB C67078-S1450-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C -8Pulsed drain current IDpulsTC = 25 C -32Avalanche energy, single pulse EAS mJ

BUZ 173SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 173 -200 V -3.6 A 1.5 TO-220 AB C67078-S1452-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C -3.6Pulsed drain current IDpulsTC = 25 C -14Avalanche energy, single pulse EAS