BUZ172 MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ172
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-220AB
BUZ172 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ172 Datasheet (PDF)
buz172.pdf
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BUZ 172SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 172 -100 V -5.5 A 0.6 TO-220 AB C67078-S1451-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C -5.5Pulsed drain current IDpulsTC = 25 C -22Avalanche energy, single pulse EAS
buz172.pdf
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Isc P-Channel MOSFET Transistor BUZ172FEATURESWith TO-220 packageLow input capacitance and gate chargesLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
buz171.pdf
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BUZ 171SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 171 -50 V -8 A 0.3 TO-220 AB C67078-S1450-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C -8Pulsed drain current IDpulsTC = 25 C -32Avalanche energy, single pulse EAS mJ
buz173.pdf
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BUZ 173SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 173 -200 V -3.6 A 1.5 TO-220 AB C67078-S1452-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C -3.6Pulsed drain current IDpulsTC = 25 C -14Avalanche energy, single pulse EAS
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