FDPF4D5N10C Todos los transistores

 

FDPF4D5N10C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPF4D5N10C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 2330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-220F

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FDPF4D5N10C datasheet

 ..1. Size:970K  onsemi
fdp4d5n10c fdpf4d5n10c.pdf pdf_icon

FDPF4D5N10C

www.onsemi.com FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 m Features General Description This N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 A Semiconductor s advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrr incorporates Shielded Gate technology. This process has b

 ..2. Size:255K  inchange semiconductor
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FDPF4D5N10C

isc N-Channel MOSFET Transistor FDPF4D5N10C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.1. Size:445K  fairchild semi
fdpf44n25trdtu.pdf pdf_icon

FDPF4D5N10C

August 2014 FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 60 pF) provi

 9.2. Size:579K  fairchild semi
fdpf4n60nz.pdf pdf_icon

FDPF4D5N10C

November 2013 FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF) on

Otros transistores... FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , 75N75 , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 .

History: IRFI4110G

 

 

 

 

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