FDPF4D5N10C Specs and Replacement
Type Designator: FDPF4D5N10C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 2330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220F
FDPF4D5N10C substitution
- MOSFET ⓘ Cross-Reference Search
FDPF4D5N10C datasheet
fdp4d5n10c fdpf4d5n10c.pdf
www.onsemi.com FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 m Features General Description This N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 A Semiconductor s advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrr incorporates Shielded Gate technology. This process has b... See More ⇒
fdpf4d5n10c.pdf
isc N-Channel MOSFET Transistor FDPF4D5N10C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
fdpf44n25trdtu.pdf
August 2014 FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 60 pF) provi... See More ⇒
fdpf4n60nz.pdf
November 2013 FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF) on... See More ⇒
Detailed specifications: FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , 75N75 , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 .
Keywords - FDPF4D5N10C MOSFET specs
FDPF4D5N10C cross reference
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FDPF4D5N10C substitution
FDPF4D5N10C replacement
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