FQB70N08 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: FQB70N08

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August 2000 TM QFET QFET QFET QFET FQB70N08 / FQI70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology

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Isc N-Channel MOSFET Transistor FQB70N08 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

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August 2000 TM QFET QFET QFET QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technolo

Otros transistores... FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L , 7N60 , FTP03N03N , IPB015N04N , IPB019N06L3 , IPB020N10N5LF , IPB023N04N , IPB027N10N3 , IPB029N06N3 , IPB031NE7N3 .