FQB70N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB70N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 790 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: D2PAK TO-263
FQB70N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB70N08 Datasheet (PDF)
fqb70n08 fqi70n08.pdf
August 2000TMQFETQFETQFETQFETFQB70N08 / FQI70N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 180 pF)This advanced technology
fqb70n08.pdf
Isc N-Channel MOSFET Transistor FQB70N08FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
fqb70n10tm am002.pdf
August 2000TMQFETQFETQFETQFETFQB70N10 / FQI70N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 150 pF)This advanced technolo
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
