IPB020N10N5LF Todos los transistores

 

IPB020N10N5LF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB020N10N5LF
   Código: 020N10LF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.1 V
   Qgⓘ - Carga de la puerta: 195 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 1900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: D2PAK TO-263

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IPB020N10N5LF Datasheet (PDF)

 ..1. Size:1011K  infineon
ipb020n10n5lf.pdf

IPB020N10N5LF
IPB020N10N5LF

IPB020N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

 ..2. Size:258K  inchange semiconductor
ipb020n10n5lf.pdf

IPB020N10N5LF
IPB020N10N5LF

Isc N-Channel MOSFET Transistor IPB020N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 3.1. Size:1169K  infineon
ipb020n10n5.pdf

IPB020N10N5LF
IPB020N10N5LF

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPB020N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPB020N10N5DPAK1 DescriptionFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperature

 3.2. Size:204K  inchange semiconductor
ipb020n10n5.pdf

IPB020N10N5LF
IPB020N10N5LF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB020N10N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:530K  infineon
ipb020ne7n3 ipb020ne7n3g.pdf

IPB020N10N5LF
IPB020N10N5LF

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 7.2. Size:516K  infineon
ipb020n04n ipb020n04ng.pdf

IPB020N10N5LF
IPB020N10N5LF

pe # ! ! #:A0A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking#)

 7.3. Size:1131K  infineon
ipb020n08n5.pdf

IPB020N10N5LF
IPB020N10N5LF

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB020N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB020N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance

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