IPB020N10N5LF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB020N10N5LF
Código: 020N10LF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 313 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.1 V
Carga de la puerta (Qg): 195 nC
Tiempo de subida (tr): 28 nS
Conductancia de drenaje-sustrato (Cd): 1900 pF
Resistencia entre drenaje y fuente RDS(on): 0.002 Ohm
Paquete / Cubierta: D2PAK TO-263
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IPB020N10N5LF Datasheet (PDF)
ipb020n10n5lf.pdf
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ipb020n10n5lf.pdf
Isc N-Channel MOSFET Transistor IPB020N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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ipb020n10n5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB020N10N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
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History: SFB063N80AC3
