IPB020N10N5LF MOSFET Datasheet: N-Ch, 100V, 120A. Full specification with pinout and replacement list

IPB020N10N5LF Specs and Replacement

Type Designator: IPB020N10N5LF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: D2PAK TO-263

IPB020N10N5LF substitution

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IPB020N10N5LF datasheet

..1. Size:1011K infineon
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IPB020N10N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒

..2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB020N10N5LF FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒

3.1. Size:1169K infineon
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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB020N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB020N10N5 D PAK 1 Description Features N-channel, normal level Optimized for FOM OSS Very low on-resistance R DS(on) 175 C operating temperature ... See More ⇒

3.2. Size:204K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB020N10N5 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very low on-resistence Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒