IPB027N10N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPB027N10N3 Datasheet (PDF)

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Isc N-Channel MOSFET Transistor IPB027N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

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IPB027N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB027N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB027N10N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

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Isc N-Channel MOSFET Transistor IPB027N10N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Otros transistores... FMH40N60S1FD , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 , IPB020N10N5LF , IPB023N04N , IRFB7545 , IPB029N06N3 , IPB031NE7N3 , IPB033N10N5LF , IPB037N06N3 , IPB039N04L , IPB041N04N , IPB049N06L3 , IPB049NE7N3 .