IPB027N10N3 PDF and Equivalents Search

 

IPB027N10N3 Specs and Replacement

Type Designator: IPB027N10N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 1940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: D2PAK TO-263

IPB027N10N3 substitution

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IPB027N10N3 datasheet

 ..1. Size:258K  inchange semiconductor
 ipb027n10n3.pdf pdf_icon

IPB027N10N3

Isc N-Channel MOSFET Transistor IPB027N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 0.1. Size:531K  infineon
 ipb027n10n3g.pdf pdf_icon

IPB027N10N3

IPB027N10N3 G 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5?B=1... See More ⇒

 4.1. Size:1134K  infineon
 ipb027n10n5.pdf pdf_icon

IPB027N10N3

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista... See More ⇒

 4.2. Size:258K  inchange semiconductor
 ipb027n10n5.pdf pdf_icon

IPB027N10N3

Isc N-Channel MOSFET Transistor IPB027N10N5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

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Detailed specifications: FMH40N60S1FD , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 , IPB020N10N5LF , IPB023N04N , IRFB7545 , IPB029N06N3 , IPB031NE7N3 , IPB033N10N5LF , IPB037N06N3 , IPB039N04L , IPB041N04N , IPB049N06L3 , IPB049NE7N3 .

Keywords - IPB027N10N3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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