All MOSFET. IPB027N10N3 Datasheet

 

IPB027N10N3 Datasheet and Replacement


   Type Designator: IPB027N10N3
   Marking Code: 027N10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 155 nC
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 1940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: D2PAK TO-263
 

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IPB027N10N3 Datasheet (PDF)

 ..1. Size:258K  inchange semiconductor
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IPB027N10N3

Isc N-Channel MOSFET Transistor IPB027N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 0.1. Size:531K  infineon
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IPB027N10N3

IPB027N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

 4.1. Size:1134K  infineon
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IPB027N10N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB027N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB027N10N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

 4.2. Size:258K  inchange semiconductor
 ipb027n10n5.pdf pdf_icon

IPB027N10N3

Isc N-Channel MOSFET Transistor IPB027N10N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

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History: IPB180N04S4L-H0

Keywords - IPB027N10N3 MOSFET datasheet

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