IPB083N15N5LF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB083N15N5LF
Código: 083N15LF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 179 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 105 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.9 V
Carga de la puerta (Qg): 45 nC
Tiempo de subida (tr): 46 nS
Conductancia de drenaje-sustrato (Cd): 740 pF
Resistencia entre drenaje y fuente RDS(on): 0.0083 Ohm
Paquete / Cubierta: D2PAK TO-263
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IPB083N15N5LF Datasheet (PDF)
ipb083n15n5lf.pdf
IPB083N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb083n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB083N15N5LFFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf
IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf
IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipb083n10n3.pdf
Isc N-Channel MOSFET Transistor IPB083N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
