IPB083N15N5LF datasheet, аналоги, основные параметры
Наименование производителя: IPB083N15N5LF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 179 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 105 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 740 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0083 Ohm
Аналог (замена) для IPB083N15N5LF
- подборⓘ MOSFET транзистора по параметрам
IPB083N15N5LF даташит
ipb083n15n5lf.pdf
IPB083N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain
ipb083n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB083N15N5LF FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
Другие IGBT... IPB049N06L3, IPB049NE7N3, IPB054N06N3, IPB05CN10N, IPB065N10N3, IPB067N08N3, IPB081N06L3, IPB083N10N3, IRF840, IPB097N08N3, IPB107N20N3, IPB110N20N3LF, IPB26CN10N, IPB34CN10N, IPB530N15N3, IPB60R040C7, IPB60R060C7
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