IRL40S212 Todos los transistores

 ..1. Size:618K  international rectifier
 irl40b212 irl40s212.pdf

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications D Battery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications G ID (Silicon Limited) 254A Resonant mode powe

 ..2. Size:257K  inchange semiconductor
 irl40s212.pdf

isc N-Channel MOSFET Transistor IRL40S212 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.1. Size:540K  international rectifier
 irl40b209.pdf

StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications D Battery powered circuits RDS(on) typ. 1.0m Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications G ID (Silicon Limited) 414A Resonant mode power supplies

 9.2. Size:542K  international rectifier
 irl40b215.pdf

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2m Battery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 9.3. Size:1067K  infineon
 irl40t209.pdf

IRL40T209 MOSFET HSOF IR MOSFET - StrongIRFET Benefits Tab Improved Gate and Avalanche Ruggedness Fully Characterized Capacitance and Avalanche SOA Improved I rating D 1 Pb-Free ; RoHS Compliant ; Halogen-Free 2 3 4 5 6 7 8 Potential applications Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-b

 9.4. Size:245K  inchange semiconductor
 irl40b212.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL40B212 IIRL40B212 FEATURES Static drain-source on-resistance RDS(on) 1.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 9.5. Size:246K  inchange semiconductor
 irl40b215.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL40B215 IIRL40B215 FEATURES Static drain-source on-resistance RDS(on) 2.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM