IRL40S212
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL40S212
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 231
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 254
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 91
nC
trⓘ - Rise Time: 154
nS
Cossⓘ -
Output Capacitance: 1050
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package:
D2PAK
TO-263
IRL40S212
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL40S212
Datasheet (PDF)
..1. Size:618K international rectifier
irl40b212 irl40s212.pdf
StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe
..2. Size:618K infineon
irl40b212 irl40s212.pdf
StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe
..3. Size:257K inchange semiconductor
irl40s212.pdf
isc N-Channel MOSFET Transistor IRL40S212FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
9.1. Size:538K international rectifier
irl40b215.pdf
StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli
9.2. Size:540K infineon
irl40b209.pdf
StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.0m Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications GID (Silicon Limited) 414A Resonant mode power supplies
9.3. Size:1067K infineon
irl40t209.pdf
IRL40T209MOSFETHSOFIR MOSFET - StrongIRFETBenefitsTab Improved Gate and Avalanche Ruggedness Fully Characterized Capacitance and Avalanche SOA Improved I ratingD1 Pb-Free ; RoHS Compliant ; Halogen-Free 2345678Potential applications Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-b
9.4. Size:542K infineon
irl40b215.pdf
StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli
9.5. Size:245K inchange semiconductor
irl40b212.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
9.6. Size:246K inchange semiconductor
irl40b215.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
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