Справочник MOSFET. IRL40S212

 

IRL40S212 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL40S212
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 231 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 254 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 91 nC
   trⓘ - Время нарастания: 154 ns
   Cossⓘ - Выходная емкость: 1050 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
   Тип корпуса: D2PAK TO-263

 Аналог (замена) для IRL40S212

 

 

IRL40S212 Datasheet (PDF)

 ..1. Size:618K  international rectifier
 irl40b212 irl40s212.pdf

IRL40S212 IRL40S212

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe

 ..2. Size:618K  infineon
 irl40b212 irl40s212.pdf

IRL40S212 IRL40S212

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe

 ..3. Size:257K  inchange semiconductor
 irl40s212.pdf

IRL40S212 IRL40S212

isc N-Channel MOSFET Transistor IRL40S212FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:538K  international rectifier
 irl40b215.pdf

IRL40S212 IRL40S212

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 9.2. Size:540K  infineon
 irl40b209.pdf

IRL40S212 IRL40S212

StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.0m Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications GID (Silicon Limited) 414A Resonant mode power supplies

 9.3. Size:1067K  infineon
 irl40t209.pdf

IRL40S212 IRL40S212

IRL40T209MOSFETHSOFIR MOSFET - StrongIRFETBenefitsTab Improved Gate and Avalanche Ruggedness Fully Characterized Capacitance and Avalanche SOA Improved I ratingD1 Pb-Free ; RoHS Compliant ; Halogen-Free 2345678Potential applications Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-b

 9.4. Size:542K  infineon
 irl40b215.pdf

IRL40S212 IRL40S212

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 9.5. Size:245K  inchange semiconductor
 irl40b212.pdf

IRL40S212 IRL40S212

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 9.6. Size:246K  inchange semiconductor
 irl40b215.pdf

IRL40S212 IRL40S212

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

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