SIHG47N60AEF Todos los transistores

SiHG47N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com

isc N-Channel MOSFET Transistor SIHG47N60AEF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS (V) at TJ max. 650 Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.07 COMPLIANT 100 % Avalanche Tested Qg max. (nC) 216 Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 Ultra Low Ron Configuration Single Compliant to R

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 C ( ) VGS = 10 V 0.065 Reduced trr, Qrr, and IRRM Qg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Qgs (nC) 32 Increased r

SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.064 Reduced switching and conduction losses Qg max. (nC) 220 Ultra low gate charge (Qg) Qgs (nC) 29 Available Qgd (nC) 57 Avalanche energy ra