SIHG47N60AEF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHG47N60AEF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 126 nC
   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 167 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-247AC

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SIHG47N60AEF Datasheet (PDF)

..1. Size:171K vishay
sihg47n60aef.pdf

SiHG47N60AEFwww.vishay.comVishay SiliconixEF Series Power MOSFET With Fast Body DiodeFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of complianceSDS please see www.vishay.com

..2. Size:261K inchange semiconductor
sihg47n60aef.pdf

isc N-Channel MOSFET Transistor SIHG47N60AEFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

5.1. Size:170K vishay
sihg47n60s.pdf

SiHG47N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS (V) at TJ max. 650 Low Figure-of-Merit Ron x QgRoHS RDS(on) max. at 25 C () VGS = 10 V 0.07COMPLIANT 100 % Avalanche TestedQg max. (nC) 216 Ultra Low Gate ChargeQgs (nC) 39Qgd (nC) 57 Ultra Low RonConfiguration Single Compliant to R

5.2. Size:191K vishay
sihg47n60ef.pdf

SiHG47N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650technologyRDS(on) max. at 25 C () VGS = 10 V 0.065 Reduced trr, Qrr, and IRRMQg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)Qgs (nC) 32 Increased r

5.3. Size:191K vishay
sihg47n60e.pdf

SiHG47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced switching and conduction lossesQg max. (nC) 220 Ultra low gate charge (Qg)Qgs (nC) 29AvailableQgd (nC) 57 Avalanche energy ra

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