SIHG47N60AEF Todos los transistores

 

SIHG47N60AEF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHG47N60AEF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 313 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 43 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.065 Ohm

Empaquetado / Estuche: TO-247AC

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SIHG47N60AEF Datasheet (PDF)

1.1. sihg47n60e.pdf Size:191K _upd-mosfet

SIHG47N60AEF
SIHG47N60AEF

SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.064 • Reduced switching and conduction losses Qg max. (nC) 220 • Ultra low gate charge (Qg) Qgs (nC) 29 Available Qgd (nC) 57 • Avalanche energy ra

1.2. sihg47n60s.pdf Size:170K _upd-mosfet

SIHG47N60AEF
SIHG47N60AEF

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS (V) at TJ max. 650 • Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 °C () VGS = 10 V 0.07 COMPLIANT • 100 % Avalanche Tested Qg max. (nC) 216 • Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 • Ultra Low Ron Configuration Single • Compliant to R

 1.3. sihg47n60ef.pdf Size:191K _upd-mosfet

SIHG47N60AEF
SIHG47N60AEF

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 °C () VGS = 10 V 0.065 • Reduced trr, Qrr, and IRRM Qg max. (nC) 228 • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) Qgs (nC) 32 • Increased r

1.4. sihg47n60s.pdf Size:168K _vishay

SIHG47N60AEF
SIHG47N60AEF

 1.5. sihg47n60aef.pdf Size:261K _inchange_semiconductor

SIHG47N60AEF
SIHG47N60AEF

isc N-Channel MOSFET Transistor SIHG47N60AEF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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