SIHG47N60AEF Specs and Replacement

Type Designator: SIHG47N60AEF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-247AC

SIHG47N60AEF substitution

- MOSFET ⓘ Cross-Reference Search

 

SIHG47N60AEF datasheet

 ..1. Size:171K  vishay
 sihg47n60aef.pdf pdf_icon

SIHG47N60AEF

SiHG47N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com... See More ⇒

 ..2. Size:261K  inchange semiconductor
 sihg47n60aef.pdf pdf_icon

SIHG47N60AEF

isc N-Channel MOSFET Transistor SIHG47N60AEF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V ... See More ⇒

 5.1. Size:170K  vishay
 sihg47n60s.pdf pdf_icon

SIHG47N60AEF

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS (V) at TJ max. 650 Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.07 COMPLIANT 100 % Avalanche Tested Qg max. (nC) 216 Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 Ultra Low Ron Configuration Single Compliant to R... See More ⇒

 5.2. Size:191K  vishay
 sihg47n60ef.pdf pdf_icon

SIHG47N60AEF

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 C ( ) VGS = 10 V 0.065 Reduced trr, Qrr, and IRRM Qg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Qgs (nC) 32 Increased r... See More ⇒

SHOW MORE

Detailed specifications: MFT60N12T22FS, MMD60R580QRH, MTD300N20J3, NTHL040N65S3F, NVD4C05NT4G, IXTH12N70X2, PSMN3R7-100BSE, R6018JNX, P60NF06, STD140N6F7, STH140N6F7, STP140N6F7, SUP70060E, TK13A60W, VN1206N5, VN1210N2, WFD5N65L

Keywords - SIHG47N60AEF MOSFET specs

 SIHG47N60AEF cross reference

 SIHG47N60AEF equivalent finder

 SIHG47N60AEF pdf lookup

 SIHG47N60AEF substitution

 SIHG47N60AEF replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.