SUP70060E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUP70060E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 131 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.0058 Ohm

Empaquetado / Estuche: TO-252

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SUP70060E Datasheet (PDF)

1.1. sup70060e.pdf Size:262K _inchange_semiconductor

Isc N-Channel MOSFET Transistor SUP70060E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

4.1. sup70040e.pdf Size:238K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP70040E ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Power Supply - Secondary Synchronous Rectification ·Power tools ·Motor drive switch ·Battery management ·ABSOLUTE MAXIMU

5.1. sup70n03-09bp.pdf Size:52K _update_mosfet

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 30 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

5.2. sup70n03-09bp sub70n03-09bp.pdf Size:73K _vishay