SUP70060E PDF and Equivalents Search

 

SUP70060E Specs and Replacement


   Type Designator: SUP70060E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 131 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO-252
 

 SUP70060E substitution

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SUP70060E datasheet

 ..1. Size:155K  vishay
sup70060e.pdf pdf_icon

SUP70060E

SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0058 at VGS = 10 V 131 100 53.5 nC 100 % Rg and UIS tested 0.0064 at VGS = 7.5 V 129 Material categorization for definitions of compliance please see TO-220A... See More ⇒

 ..2. Size:262K  inchange semiconductor
sup70060e.pdf pdf_icon

SUP70060E

Isc N-Channel MOSFET Transistor SUP70060E FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒

 8.1. Size:147K  vishay
sup70040e.pdf pdf_icon

SUP70060E

SUP70040E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.0040 at VGS = 10 V 120 100 76 100 % Rg and UIS tested 0.0046 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see TO-220AB ... See More ⇒

 8.2. Size:238K  inchange semiconductor
sup70040e.pdf pdf_icon

SUP70060E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP70040E FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: NVD4C05NT4G , IXTH12N70X2 , PSMN3R7-100BSE , R6018JNX , SIHG47N60AEF , STD140N6F7 , STH140N6F7 , STP140N6F7 , STP65NF06 , TK13A60W , VN1206N5 , VN1210N2 , WFD5N65L , CJ1012 , CJ1012-G , CJ2101 , CJ2102 .

History: US6K2

Keywords - SUP70060E MOSFET specs

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