SUP70060E Datasheet and Replacement

SUP70060Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0058 at VGS = 10 V 131100 53.5 nC 100 % Rg and UIS tested0.0064 at VGS = 7.5 V 129 Material categorization:for definitions of compliance please see TO-220A

Isc N-Channel MOSFET Transistor SUP70060EFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

SUP70040Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature0.0040 at VGS = 10 V 120100 76 100 % Rg and UIS tested0.0046 at VGS = 7.5 V 120 Material categorization:for definitions of compliance please see TO-220AB

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUP70040EFEATURESTrenchFET Power MOSFET175 C Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONPower Supply- Secondary Synchronous RectificationPower toolsMotor drive switchBattery managementABSOLUTE MAXIMU

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP/SUB70N06-14Vishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETPRODUCT SUMMARY V(BR)DSS (V) rDS(on) ()ID (A)Pb-free60 0.014 Available70aRoHS*COMPLIANTTO-220AB DTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N06-14Top ViewN-Channel MOSFETSUP70N06-14Ordering Information: SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (P

SUP/SUB70N03-09PVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V "70a30300.015 @ VGS = 4.5 V "55DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09Top ViewN-Channel MOSFETSUP70N03-09ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP/SUB70N04-10Vishay SiliconixN-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V 70400.014 @ VGS = 4.5 V 58DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N04-10Top ViewN-Channel MOSFETSUP70N04-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-