SUP70060E datasheet, подбор замены

 ..1. Size:155K  vishay
 sup70060e.pdf 

SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0058 at VGS = 10 V 131 100 53.5 nC 100 % Rg and UIS tested 0.0064 at VGS = 7.5 V 129 Material categorization for definitions of compliance please see TO-220A

 ..2. Size:262K  inchange semiconductor
 sup70060e.pdf 

Isc N-Channel MOSFET Transistor SUP70060E FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.1. Size:147K  vishay
 sup70040e.pdf 

SUP70040E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.0040 at VGS = 10 V 120 100 76 100 % Rg and UIS tested 0.0046 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see TO-220AB

 8.2. Size:238K  inchange semiconductor
 sup70040e.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP70040E FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMU

 9.1. Size:73K  vishay
 sup70n03-09bp sub70n03-09bp.pdf 

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 30 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

 9.2. Size:94K  vishay
 sup70n06-14 sub70n06-14.pdf 

SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) ( )ID (A) Pb-free 60 0.014 Available 70a RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Ordering Information SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (P

 9.3. Size:113K  vishay
 sup70n03-09p sub70n03-09p.pdf 

SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 30 30 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09 Top View N-Channel MOSFET SUP70N03-09 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy

 9.4. Size:52K  vishay
 sup70n03-09bp.pdf 

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 30 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

 9.5. Size:71K  vishay
 sup70n04-10 sub70n04-10.pdf 

SUP/SUB70N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 70 40 0.014 @ VGS = 4.5 V 58 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N04-10 Top View N-Channel MOSFET SUP70N04-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-