CJP10N60 Todos los transistores

 

CJP10N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJP10N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 117 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de CJP10N60 MOSFET

   - Selección ⓘ de transistores por parámetros

 

CJP10N60 Datasheet (PDF)

 ..1. Size:485K  jiangsu
 cjp10n60 cjpf10n60.pdf pdf_icon

CJP10N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETSCJP10N60,CJPF10N60 N-Channel Power MOSFET TO-220-3L/TO-220FDescription The CJP10N60/CJPF10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche character

 7.1. Size:375K  jiangsu
 cjp10n65.pdf pdf_icon

CJP10N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP10N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig

Otros transistores... CJP04N65 , CJP04N65A , CJP05N60 , CJP05N60B , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , IRFB31N20D , CJP10N65 , CJP12N60 , CJP12N65 , CJP71N90 , CJP75N75 , CJP75N80 , CJP85N80 , CJPF01N65B .

History: JCS7N70FE | CXDM3069N | 2SK2074 | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | APQ110SN5EA

 

 
Back to Top

 


 
.