CJP10N60 Datasheet and Replacement
Type Designator: CJP10N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
CJP10N60 substitution
CJP10N60 Datasheet (PDF)
cjp10n60 cjpf10n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETSCJP10N60,CJPF10N60 N-Channel Power MOSFET TO-220-3L/TO-220FDescription The CJP10N60/CJPF10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche character
cjp10n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP10N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig
Datasheet: CJP04N65 , CJP04N65A , CJP05N60 , CJP05N60B , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , IRFB31N20D , CJP10N65 , CJP12N60 , CJP12N65 , CJP71N90 , CJP75N75 , CJP75N80 , CJP85N80 , CJPF01N65B .
Keywords - CJP10N60 MOSFET datasheet
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