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CJP12N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJP12N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-220
 

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CJP12N60 Datasheet (PDF)

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CJP12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP12N60 600V N-Channel Power MOSFET TO-220-3L General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand 1. GATE high energy pulse in the avalanche and commutation mode. These devices

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CJP12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP12N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig

Otros transistores... CJP05N60 , CJP05N60B , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , AON6380 , CJP12N65 , CJP71N90 , CJP75N75 , CJP75N80 , CJP85N80 , CJPF01N65B , CJPF02N60 , CJPF02N65 .

History: VS6038AD | AP70SL1K4BJB | IPD60R145CFD7 | PSMN9R0-30LL | HM85P02 | SM5A27NSF | MEE3710-G

 

 
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