All MOSFET. CJP12N60 Datasheet

 

CJP12N60 Datasheet and Replacement


   Type Designator: CJP12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

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CJP12N60 Datasheet (PDF)

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CJP12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP12N60 600V N-Channel Power MOSFET TO-220-3L General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand 1. GATE high energy pulse in the avalanche and commutation mode. These devices

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CJP12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP12N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig

Datasheet: CJP05N60 , CJP05N60B , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , AON6380 , CJP12N65 , CJP71N90 , CJP75N75 , CJP75N80 , CJP85N80 , CJPF01N65B , CJPF02N60 , CJPF02N65 .

History: GSM3316W | HY3208B | TSM2611EDCX6 | AO6801E | VS6038AD | LPSC3487

Keywords - CJP12N60 MOSFET datasheet

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