CTLDM3590 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CTLDM3590
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TLM3D6D8

Búsqueda de reemplazo de MOSFET CTLDM3590

CTLDM3590 Datasheet (PDF)

..1. Size:1156K central
ctldm3590.pdf

CTLDM3590SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM3590 isSILICON MOSFETan enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 1FEA

8.1. Size:678K central
ctldm304p-m832ds.pdf

CTLDM304P-M832DSSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM304P-M832DSSILICON MOSFETis a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M

8.2. Size:678K central
ctldm303n-m832ds.pdf

CTLDM303N-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM303N-M832DSSILICON MOSFETis a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MA

9.1. Size:612K central
ctldm7002a-m621.pdf

CTLDM7002A-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CPTLM621 CASE FEATURES: Low rDS(ON) Device is Halogen Free by design Low VDS(ON)APPLICATIONS: Low

9.2. Size:613K central
ctldm7120-m832ds.pdf

CTLDM7120-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING COD

9.3. Size:610K central
ctldm8002a-m621.pdf

CTLDM8002A-M621SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CNFEATURES: Low rDS(on)TLM621 CASE Low VDS(on) Low Threshold VoltageAPPLICATIONS: Fast Switchi

9.4. Size:467K central
ctldm7181-m832d.pdf

CTLDM7181-M832DSURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETSCTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages.MARK

9.5. Size:456K central
ctldm7120-m621 ctldm7120-m621h.pdf

CTLDM7120-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKIN

9.6. Size:470K central
ctldm7120-m832d.pdf

CTLDM7120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

9.7. Size:458K central
ctldm8002a-m621h.pdf

CTLDM8002A-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFETis a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNCFEATURES: Low rDS(on)TLM621H CASE Low VDS(on)APPLICATIONS: Low Threshold V

9.8. Size:613K central
ctldm7003-m621.pdf

CTLDM7003-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7003-M621 SILICON MOSFETis a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CSFEATURES:TLM621 CASE ESD Protection up to 2kV Low rDS(ON) Device is Halogen Free by design Low Th

9.9. Size:418K central
ctldm8120-m621h.pdf

CTLDM8120-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNFTLM621H CASE Device is Halogen Free by designFEATURES:APPLICATIONS: Low rDS(ON)

9.10. Size:455K central
ctldm7002a-m621h.pdf

CTLDM7002A-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7002A-M621HSILICON MOSFETis a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNDFEATURES:TLM621H CASE Low rDS(ON) Device is Halogen Free by design

9.11. Size:466K central
ctldm8120-m832d.pdf

CTLDM8120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

9.12. Size:1138K central
ctldm7590.pdf

CTLDM7590SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFETenhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 2FE

9.13. Size:632K central
ctldm7120-m563.pdf

CTLDM7120-M563SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFETis a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte

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