CTLDM3590 Datasheet. Equivalente

 ..1. Size:1156K  central
 ctldm3590.pdf

CTLDM3590 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM3590 is SILICON MOSFET an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE 1 FEA

 8.1. Size:678K  central
 ctldm304p-m832ds.pdf

CTLDM304P-M832DS SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS SILICON MOSFET is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M

 8.2. Size:678K  central
 ctldm303n-m832ds.pdf

CTLDM303N-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS SILICON MOSFET is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MA

 9.1. Size:612K  central
 ctldm7002a-m621.pdf

CTLDM7002A-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CP TLM621 CASE FEATURES Low rDS(ON) Device is Halogen Free by design Low VDS(ON) APPLICATIONS Low

 9.2. Size:613K  central
 ctldm7120-m832ds.pdf

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD

 9.3. Size:610K  central
 ctldm8002a-m621.pdf

CTLDM8002A-M621 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CN FEATURES Low rDS(on) TLM621 CASE Low VDS(on) Low Threshold Voltage APPLICATIONS Fast Switchi

 9.4. Size:467K  central
 ctldm7181-m832d.pdf

CTLDM7181-M832D SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETS CTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages. MARK

 9.5. Size:456K  central
 ctldm7120-m621 ctldm7120-m621h.pdf

CTLDM7120-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKIN

 9.6. Size:470K  central
 ctldm7120-m832d.pdf

CTLDM7120-M832D SURFACE MOUNT www.centralsemi.com DUAL, N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

 9.7. Size:458K  central
 ctldm8002a-m621h.pdf

CTLDM8002A-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFET is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package. MARKING CODE CNC FEATURES Low rDS(on) TLM621H CASE Low VDS(on) APPLICATIONS Low Threshold V

 9.8. Size:613K  central
 ctldm7003-m621.pdf

CTLDM7003-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7003-M621 SILICON MOSFET is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CS FEATURES TLM621 CASE ESD Protection up to 2kV Low rDS(ON) Device is Halogen Free by design Low Th

 9.9. Size:418K  central
 ctldm8120-m621h.pdf

CTLDM8120-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CNF TLM621H CASE Device is Halogen Free by design FEATURES APPLICATIONS Low rDS(ON)

 9.10. Size:455K  central
 ctldm7002a-m621h.pdf

CTLDM7002A-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7002A-M621H SILICON MOSFET is a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CND FEATURES TLM621H CASE Low rDS(ON) Device is Halogen Free by design

 9.11. Size:466K  central
 ctldm8120-m832d.pdf

CTLDM8120-M832D SURFACE MOUNT www.centralsemi.com DUAL, P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

 9.12. Size:1138K  central
 ctldm7590.pdf

CTLDM7590 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFET enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE 2 FE

 9.13. Size:632K  central
 ctldm7120-m563.pdf

CTLDM7120-M563 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFET is a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte