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CTLDM3590 Spec and Replacement


   Type Designator: CTLDM3590
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TLM3D6D8

 CTLDM3590 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTLDM3590 Specs

 ..1. Size:1156K  central
ctldm3590.pdf pdf_icon

CTLDM3590

CTLDM3590 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM3590 is SILICON MOSFET an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE 1 FEA... See More ⇒

 8.1. Size:678K  central
ctldm304p-m832ds.pdf pdf_icon

CTLDM3590

CTLDM304P-M832DS SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS SILICON MOSFET is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M... See More ⇒

 8.2. Size:678K  central
ctldm303n-m832ds.pdf pdf_icon

CTLDM3590

CTLDM303N-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS SILICON MOSFET is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MA... See More ⇒

 9.1. Size:612K  central
ctldm7002a-m621.pdf pdf_icon

CTLDM3590

CTLDM7002A-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CP TLM621 CASE FEATURES Low rDS(ON) Device is Halogen Free by design Low VDS(ON) APPLICATIONS Low... See More ⇒

Detailed specifications: CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B , CJW1012 , CTLDM303N-M832DS , CTLDM304P-M832DS , 8205A , CTLDM7002A-M621 , CTLDM7002A-M621H , CTLDM7003-M621 , CTLDM7120-M563 , CTLDM7120-M621 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS .

History: IXFR20N100P | PM550BA

Keywords - CTLDM3590 MOSFET specs

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History: IXFR20N100P | PM550BA

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