CTLDM3590
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CTLDM3590
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.16
A
Tjⓘ - Максимальная температура канала: 150
°C
Cossⓘ - Выходная емкость: 3
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3
Ohm
Тип корпуса: TLM3D6D8
- подбор MOSFET транзистора по параметрам
CTLDM3590
Datasheet (PDF)
..1. Size:1156K central
ctldm3590.pdf 

CTLDM3590SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM3590 isSILICON MOSFETan enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 1FEA
8.1. Size:678K central
ctldm304p-m832ds.pdf 

CTLDM304P-M832DSSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM304P-M832DSSILICON MOSFETis a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M
8.2. Size:678K central
ctldm303n-m832ds.pdf 

CTLDM303N-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM303N-M832DSSILICON MOSFETis a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MA
9.1. Size:612K central
ctldm7002a-m621.pdf 

CTLDM7002A-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CPTLM621 CASE FEATURES: Low rDS(ON) Device is Halogen Free by design Low VDS(ON)APPLICATIONS: Low
9.2. Size:613K central
ctldm7120-m832ds.pdf 

CTLDM7120-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING COD
9.3. Size:610K central
ctldm8002a-m621.pdf 

CTLDM8002A-M621SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CNFEATURES: Low rDS(on)TLM621 CASE Low VDS(on) Low Threshold VoltageAPPLICATIONS: Fast Switchi
9.4. Size:467K central
ctldm7181-m832d.pdf 

CTLDM7181-M832DSURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETSCTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages.MARK
9.5. Size:456K central
ctldm7120-m621 ctldm7120-m621h.pdf 

CTLDM7120-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKIN
9.6. Size:470K central
ctldm7120-m832d.pdf 

CTLDM7120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt
9.7. Size:458K central
ctldm8002a-m621h.pdf 

CTLDM8002A-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFETis a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNCFEATURES: Low rDS(on)TLM621H CASE Low VDS(on)APPLICATIONS: Low Threshold V
9.8. Size:613K central
ctldm7003-m621.pdf 

CTLDM7003-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7003-M621 SILICON MOSFETis a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CSFEATURES:TLM621 CASE ESD Protection up to 2kV Low rDS(ON) Device is Halogen Free by design Low Th
9.9. Size:418K central
ctldm8120-m621h.pdf 

CTLDM8120-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNFTLM621H CASE Device is Halogen Free by designFEATURES:APPLICATIONS: Low rDS(ON)
9.10. Size:455K central
ctldm7002a-m621h.pdf 

CTLDM7002A-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7002A-M621HSILICON MOSFETis a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNDFEATURES:TLM621H CASE Low rDS(ON) Device is Halogen Free by design
9.11. Size:466K central
ctldm8120-m832d.pdf 

CTLDM8120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt
9.12. Size:1138K central
ctldm7590.pdf 

CTLDM7590SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFETenhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 2FE
9.13. Size:632K central
ctldm7120-m563.pdf 

CTLDM7120-M563SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFETis a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte
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History: CTS03P015
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