CTLDM7003-M621 Datasheet. Equivalente

 ..1. Size:613K  central
 ctldm7003-m621.pdf

CTLDM7003-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7003-M621 SILICON MOSFET is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CS FEATURES TLM621 CASE ESD Protection up to 2kV Low rDS(ON) Device is Halogen Free by design Low Th

 6.1. Size:612K  central
 ctldm7002a-m621.pdf

CTLDM7002A-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CP TLM621 CASE FEATURES Low rDS(ON) Device is Halogen Free by design Low VDS(ON) APPLICATIONS Low

 6.2. Size:455K  central
 ctldm7002a-m621h.pdf

CTLDM7002A-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7002A-M621H SILICON MOSFET is a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CND FEATURES TLM621H CASE Low rDS(ON) Device is Halogen Free by design

 8.1. Size:613K  central
 ctldm7120-m832ds.pdf

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD

 8.2. Size:467K  central
 ctldm7181-m832d.pdf

CTLDM7181-M832D SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETS CTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages. MARK

 8.3. Size:456K  central
 ctldm7120-m621 ctldm7120-m621h.pdf

CTLDM7120-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKIN

 8.4. Size:470K  central
 ctldm7120-m832d.pdf

CTLDM7120-M832D SURFACE MOUNT www.centralsemi.com DUAL, N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

 8.5. Size:1138K  central
 ctldm7590.pdf

CTLDM7590 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFET enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE 2 FE

 8.6. Size:632K  central
 ctldm7120-m563.pdf

CTLDM7120-M563 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFET is a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte