CTLDM7003-M621
MOSFET. Datasheet pdf. Equivalent
Type Designator: CTLDM7003-M621
Marking Code: CS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package: TLM621
CTLDM7003-M621
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTLDM7003-M621
Datasheet (PDF)
..1. Size:613K central
ctldm7003-m621.pdf 
CTLDM7003-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7003-M621 SILICON MOSFETis a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CSFEATURES:TLM621 CASE ESD Protection up to 2kV Low rDS(ON) Device is Halogen Free by design Low Th
6.1. Size:612K central
ctldm7002a-m621.pdf
CTLDM7002A-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CPTLM621 CASE FEATURES: Low rDS(ON) Device is Halogen Free by design Low VDS(ON)APPLICATIONS: Low
6.2. Size:455K central
ctldm7002a-m621h.pdf
CTLDM7002A-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7002A-M621HSILICON MOSFETis a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNDFEATURES:TLM621H CASE Low rDS(ON) Device is Halogen Free by design
8.1. Size:613K central
ctldm7120-m832ds.pdf
CTLDM7120-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING COD
8.2. Size:467K central
ctldm7181-m832d.pdf
CTLDM7181-M832DSURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETSCTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages.MARK
8.3. Size:456K central
ctldm7120-m621 ctldm7120-m621h.pdf
CTLDM7120-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKIN
8.4. Size:470K central
ctldm7120-m832d.pdf
CTLDM7120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt
8.5. Size:1138K central
ctldm7590.pdf
CTLDM7590SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFETenhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 2FE
8.6. Size:632K central
ctldm7120-m563.pdf
CTLDM7120-M563SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFETis a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte
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