CTLDM7003-M621 - аналоги и даташиты транзистора

 

CTLDM7003-M621 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CTLDM7003-M621
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.28 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 25 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TLM621

 Аналог (замена) для CTLDM7003-M621

 

CTLDM7003-M621 Datasheet (PDF)

 ..1. Size:613K  central
ctldm7003-m621.pdfpdf_icon

CTLDM7003-M621

CTLDM7003-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7003-M621 SILICON MOSFET is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CS FEATURES TLM621 CASE ESD Protection up to 2kV Low rDS(ON) Device is Halogen Free by design Low Th

 6.1. Size:612K  central
ctldm7002a-m621.pdfpdf_icon

CTLDM7003-M621

CTLDM7002A-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CP TLM621 CASE FEATURES Low rDS(ON) Device is Halogen Free by design Low VDS(ON) APPLICATIONS Low

 6.2. Size:455K  central
ctldm7002a-m621h.pdfpdf_icon

CTLDM7003-M621

CTLDM7002A-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7002A-M621H SILICON MOSFET is a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CND FEATURES TLM621H CASE Low rDS(ON) Device is Halogen Free by design

 8.1. Size:613K  central
ctldm7120-m832ds.pdfpdf_icon

CTLDM7003-M621

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD

Другие MOSFET... CJV01N60 , CJV01N65B , CJW1012 , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 , CTLDM7002A-M621 , CTLDM7002A-M621H , IRF630 , CTLDM7120-M563 , CTLDM7120-M621 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 .

History: CTLDM3590

 

 
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