CTLDM8002A-M621H Todos los transistores

 

CTLDM8002A-M621H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CTLDM8002A-M621H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TLM621H
 

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CTLDM8002A-M621H datasheet

 0.1. Size:610K  central
 ctldm8002a-m621.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8002A-M621 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CN FEATURES Low rDS(on) TLM621 CASE Low VDS(on) Low Threshold Voltage APPLICATIONS Fast Switchi

 0.2. Size:458K  central
 ctldm8002a-m621h.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8002A-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFET is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package. MARKING CODE CNC FEATURES Low rDS(on) TLM621H CASE Low VDS(on) APPLICATIONS Low Threshold V

 8.1. Size:418K  central
 ctldm8120-m621h.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8120-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CNF TLM621H CASE Device is Halogen Free by design FEATURES APPLICATIONS Low rDS(ON)

 8.2. Size:466K  central
 ctldm8120-m832d.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8120-M832D SURFACE MOUNT www.centralsemi.com DUAL, P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

MOSTRAR MÁS

Otros transistores... CTLDM7120-M563 , CTLDM7120-M621 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , AO3401 , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 .

History: AGM30P25D | AGM20P22AS

 

 
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