CTLDM8002A-M621H
MOSFET. Datasheet pdf. Equivalent
Type Designator: CTLDM8002A-M621H
Marking Code: CNC
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 15
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package: TLM621H
CTLDM8002A-M621H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTLDM8002A-M621H
Datasheet (PDF)
0.1. Size:610K central
ctldm8002a-m621.pdf
CTLDM8002A-M621SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CNFEATURES: Low rDS(on)TLM621 CASE Low VDS(on) Low Threshold VoltageAPPLICATIONS: Fast Switchi
0.2. Size:458K central
ctldm8002a-m621h.pdf
CTLDM8002A-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFETis a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNCFEATURES: Low rDS(on)TLM621H CASE Low VDS(on)APPLICATIONS: Low Threshold V
8.1. Size:418K central
ctldm8120-m621h.pdf
CTLDM8120-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNFTLM621H CASE Device is Halogen Free by designFEATURES:APPLICATIONS: Low rDS(ON)
8.2. Size:466K central
ctldm8120-m832d.pdf
CTLDM8120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt
Datasheet: WPB4002
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