All MOSFET. CTLDM8002A-M621H Datasheet

 

CTLDM8002A-M621H Datasheet and Replacement


   Type Designator: CTLDM8002A-M621H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TLM621H
 

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CTLDM8002A-M621H Datasheet (PDF)

 0.1. Size:610K  central
 ctldm8002a-m621.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8002A-M621SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CNFEATURES: Low rDS(on)TLM621 CASE Low VDS(on) Low Threshold VoltageAPPLICATIONS: Fast Switchi

 0.2. Size:458K  central
 ctldm8002a-m621h.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8002A-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFETis a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNCFEATURES: Low rDS(on)TLM621H CASE Low VDS(on)APPLICATIONS: Low Threshold V

 8.1. Size:418K  central
 ctldm8120-m621h.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8120-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNFTLM621H CASE Device is Halogen Free by designFEATURES:APPLICATIONS: Low rDS(ON)

 8.2. Size:466K  central
 ctldm8120-m832d.pdf pdf_icon

CTLDM8002A-M621H

CTLDM8120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

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Datasheet: CTLDM7120-M563 , CTLDM7120-M621 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , AO3400 , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 .

History: LSD70R380GT | 2SJ364 | STP40NF10L | BUK9610-55A | FDS7064N | TTX2302A | CES2321A

Keywords - CTLDM8002A-M621H MOSFET datasheet

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