CWDM3011P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CWDM3011P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 320 pF
Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
Paquete / Cubierta: SOIC-8
Búsqueda de reemplazo de MOSFET CWDM3011P
CWDM3011P Datasheet (PDF)
cwdm3011p.pdf
CWDM3011PSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM3011P is MOSFETa high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge.MARKING CODE: C3011PSOIC
cwdm3011n.pdf
CWDM3011NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM3011N is MOSFETa high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MARKING CODE
cwdm305nd.pdf
CWDM305NDSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFETa dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.M
cwdm305pd.pdf
CWDM305PDSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFETis a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol
cwdm305n.pdf
CWDM305NSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305N is SILICON MOSFETa high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MARKING CODE:
cwdm305p.pdf
CWDM305PSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305P is SILICON MOSFETa high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage,
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