CWDM3011P - аналоги и даташиты транзистора

 

CWDM3011P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CWDM3011P
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 320 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SOIC-8

 Аналог (замена) для CWDM3011P

 

CWDM3011P Datasheet (PDF)

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 cwdm3011p.pdf pdf_icon

CWDM3011P

CWDM3011P SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM3011P is MOSFET a high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge. MARKING CODE C3011P SOIC

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 cwdm3011n.pdf pdf_icon

CWDM3011P

CWDM3011N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM3011N is MOSFET a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE

 8.1. Size:1143K  central
 cwdm305nd.pdf pdf_icon

CWDM3011P

CWDM305ND SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFET a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M

 8.2. Size:654K  central
 cwdm305pd.pdf pdf_icon

CWDM3011P

CWDM305PD SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFET is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , IRFP450 , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , CXDM4060N , CXDM4060P .

 

 
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