All MOSFET. CWDM3011P Datasheet

 

CWDM3011P Datasheet and Replacement


   Type Designator: CWDM3011P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOIC-8
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CWDM3011P Datasheet (PDF)

 ..1. Size:1136K  central
cwdm3011p.pdf pdf_icon

CWDM3011P

CWDM3011PSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM3011P is MOSFETa high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge.MARKING CODE: C3011PSOIC

 6.1. Size:1137K  central
cwdm3011n.pdf pdf_icon

CWDM3011P

CWDM3011NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM3011N is MOSFETa high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MARKING CODE

 8.1. Size:1143K  central
cwdm305nd.pdf pdf_icon

CWDM3011P

CWDM305NDSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFETa dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.M

 8.2. Size:654K  central
cwdm305pd.pdf pdf_icon

CWDM3011P

CWDM305PDSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFETis a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol

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