DE275X2-102N06A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DE275X2-102N06A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 V
   Qgⓘ - Carga de la puerta: 50 nC
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: DE275X2

Búsqueda de reemplazo de MOSFET DE275X2-102N06A

DE275X2-102N06A Datasheet (PDF)

0.1. Size:141K ixys
de275x2-102n06a.pdf

DE275X2-102N06A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a 0.8 common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W

6.1. Size:168K ixys
de275x2-501n16a.pdf

DE275X2-501N16A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode VDSS = 500 V Low Qg and Rg High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = 0.38 The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W lel operatio

9.1. Size:137K ixys
de275-201n25a.pdf

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode VDSS = 200 V Low Qg and Rg High dv/dt ID25 = 25 A Nanosecond Switching RDS(on) = 0.13 Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 200 V TJ = 25C to 150C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transie

9.2. Size:167K ixys
de275-102n06a.pdf

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode VDSS = 1000 V Low Qg and Rg High dv/dt ID25 = 8 A Nanosecond Switching RDS(on) = 1.5 Ideal for Class C, D, & E Applications PDC = 590 W Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transi

9.3. Size:146K ixys
de275-501n16a.pdf

DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 16 A Ideal for Class C, D, & E Applications RDS(on) = 0.4 Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transien

9.4. Size:143K ixys
de275-101n30a.pdf

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt ID25 = 30.0 A Nanosecond Switching RDS(on) Symbol Test Conditions Maximum Ratings 0.06 TJ = 25C to 150C VDSS 100 V PDC = 550 W TJ = 25C to 150C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 30

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History: IRFR812

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