Справочник MOSFET. DE275X2-102N06A

 

DE275X2-102N06A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DE275X2-102N06A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 50 nC
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: DE275X2

 Аналог (замена) для DE275X2-102N06A

 

 

DE275X2-102N06A Datasheet (PDF)

 0.1. Size:141K  ixys
 de275x2-102n06a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275X2-102N06A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a 0.8 common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W

 6.1. Size:168K  ixys
 de275x2-501n16a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275X2-501N16A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode VDSS = 500 V Low Qg and Rg High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = 0.38 The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W lel operatio

 9.1. Size:137K  ixys
 de275-201n25a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode VDSS = 200 V Low Qg and Rg High dv/dt ID25 = 25 A Nanosecond Switching RDS(on) = 0.13 Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 200 V TJ = 25C to 150C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transie

 9.2. Size:167K  ixys
 de275-102n06a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode VDSS = 1000 V Low Qg and Rg High dv/dt ID25 = 8 A Nanosecond Switching RDS(on) = 1.5 Ideal for Class C, D, & E Applications PDC = 590 W Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transi

 9.3. Size:146K  ixys
 de275-501n16a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 16 A Ideal for Class C, D, & E Applications RDS(on) = 0.4 Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transien

 9.4. Size:143K  ixys
 de275-101n30a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt ID25 = 30.0 A Nanosecond Switching RDS(on) Symbol Test Conditions Maximum Ratings 0.06 TJ = 25C to 150C VDSS 100 V PDC = 550 W TJ = 25C to 150C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 30

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