All MOSFET. DE275X2-102N06A Datasheet

 

DE275X2-102N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: DE275X2-102N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: DE275X2

 DE275X2-102N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DE275X2-102N06A Datasheet (PDF)

 0.1. Size:141K  ixys
 de275x2-102n06a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275X2-102N06A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a 0.8 common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W

 6.1. Size:168K  ixys
 de275x2-501n16a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275X2-501N16A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode VDSS = 500 V Low Qg and Rg High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = 0.38 The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W lel operatio

 9.1. Size:137K  ixys
 de275-201n25a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode VDSS = 200 V Low Qg and Rg High dv/dt ID25 = 25 A Nanosecond Switching RDS(on) = 0.13 Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 200 V TJ = 25C to 150C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transie

 9.2. Size:167K  ixys
 de275-102n06a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode VDSS = 1000 V Low Qg and Rg High dv/dt ID25 = 8 A Nanosecond Switching RDS(on) = 1.5 Ideal for Class C, D, & E Applications PDC = 590 W Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transi

 9.3. Size:146K  ixys
 de275-501n16a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 16 A Ideal for Class C, D, & E Applications RDS(on) = 0.4 Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transien

 9.4. Size:143K  ixys
 de275-101n30a.pdf

DE275X2-102N06A DE275X2-102N06A

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt ID25 = 30.0 A Nanosecond Switching RDS(on) Symbol Test Conditions Maximum Ratings 0.06 TJ = 25C to 150C VDSS 100 V PDC = 550 W TJ = 25C to 150C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 30

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDMS8D8N15C | STU313D | FDMS86300

 

 
Back to Top