DKI04103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DKI04103
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 32 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 29 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 13.3 nC
Tiempo de subida (tr): 2.2 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.0118 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET DKI04103
DKI04103 Datasheet (PDF)
dki04103.pdf
40 V, 29 A, 9.5 m Low RDS(ON) N ch Trench Power MOSFET DKI04103 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 29 A D RDS(ON) -------- 11.8 m max. (VGS = 10 V, ID = 18.8 A) Qg ------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A) Low Total Gate
dki04103.pdf
isc N-Channel MOSFET Transistor DKI04103FEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 11.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
dki04035.pdf
40 V, 48 A, 3.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04035 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 4.3 m max. (VGS = 10 V, ID = 51 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate
dki04077.pdf
40 V, 47 A, 6.9 m Low RDS(ON) N ch Trench Power MOSFET DKI04077 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 8.9 m max. (VGS = 10 V, ID = 23.3 A) Qg ------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) Low Total Gat
dki04046.pdf
40 V, 48 A, 4.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04046 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 5.6 m max. (VGS = 10 V, ID = 35.4 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate
dki04035.pdf
isc N-Channel MOSFET Transistor DKI04035FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki04077.pdf
isc N-Channel MOSFET Transistor DKI04077FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki04046.pdf
isc N-Channel MOSFET Transistor DKI04046FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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