DKI04103
MOSFET. Datasheet pdf. Equivalent
Type Designator: DKI04103
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 29
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13.3
nC
trⓘ - Rise Time: 2.2
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118
Ohm
Package:
TO-252
DKI04103
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DKI04103
Datasheet (PDF)
..1. Size:369K sanken-ele
dki04103.pdf 
40 V, 29 A, 9.5 m Low RDS(ON) N ch Trench Power MOSFET DKI04103 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 29 A D RDS(ON) -------- 11.8 m max. (VGS = 10 V, ID = 18.8 A) Qg ------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A) Low Total Gate
..2. Size:266K inchange semiconductor
dki04103.pdf
isc N-Channel MOSFET Transistor DKI04103FEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 11.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.1. Size:369K sanken-ele
dki04035.pdf
40 V, 48 A, 3.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04035 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 4.3 m max. (VGS = 10 V, ID = 51 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate
9.2. Size:369K sanken-ele
dki04077.pdf
40 V, 47 A, 6.9 m Low RDS(ON) N ch Trench Power MOSFET DKI04077 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 8.9 m max. (VGS = 10 V, ID = 23.3 A) Qg ------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) Low Total Gat
9.3. Size:369K sanken-ele
dki04046.pdf
40 V, 48 A, 4.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04046 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 5.6 m max. (VGS = 10 V, ID = 35.4 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate
9.4. Size:266K inchange semiconductor
dki04035.pdf
isc N-Channel MOSFET Transistor DKI04035FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.5. Size:266K inchange semiconductor
dki04077.pdf
isc N-Channel MOSFET Transistor DKI04077FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.6. Size:266K inchange semiconductor
dki04046.pdf
isc N-Channel MOSFET Transistor DKI04046FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
