DKI04103 datasheet, подбор замены

 ..1. Size:369K  sanken-ele
 dki04103.pdf 

40 V, 29 A, 9.5 m Low RDS(ON) N ch Trench Power MOSFET DKI04103 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 29 A D RDS(ON) -------- 11.8 m max. (VGS = 10 V, ID = 18.8 A) Qg ------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A) Low Total Gate

 ..2. Size:266K  inchange semiconductor
 dki04103.pdf 

isc N-Channel MOSFET Transistor DKI04103 FEATURES Drain Current I =29A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 11.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:369K  sanken-ele
 dki04035.pdf 

40 V, 48 A, 3.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04035 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 4.3 m max. (VGS = 10 V, ID = 51 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate

 9.2. Size:369K  sanken-ele
 dki04077.pdf 

40 V, 47 A, 6.9 m Low RDS(ON) N ch Trench Power MOSFET DKI04077 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 8.9 m max. (VGS = 10 V, ID = 23.3 A) Qg ------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) Low Total Gat

 9.3. Size:369K  sanken-ele
 dki04046.pdf 

40 V, 48 A, 4.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04046 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 5.6 m max. (VGS = 10 V, ID = 35.4 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate

 9.4. Size:266K  inchange semiconductor
 dki04035.pdf 

isc N-Channel MOSFET Transistor DKI04035 FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 4.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.5. Size:266K  inchange semiconductor
 dki04077.pdf 

isc N-Channel MOSFET Transistor DKI04077 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 8.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.6. Size:266K  inchange semiconductor
 dki04046.pdf 

isc N-Channel MOSFET Transistor DKI04046 FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose