DKI10751 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DKI10751
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 32 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 14.7 nC
Tiempo de subida (tr): 2 nS
Conductancia de drenaje-sustrato (Cd): 88 pF
Resistencia entre drenaje y fuente RDS(on): 0.0726 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET DKI10751
DKI10751 Datasheet (PDF)
dki10751.pdf
100 V, 15 A, 50.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10751 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 15 A D RDS(ON) ---------- 72.6m max. (VGS = 10 V, ID = 7.5 A) Qg --------- 6.5 nC (VGS = 4.5 V, VDS = 50 V, ID = 9.5 A) Low Total G
dki10751.pdf
isc N-Channel MOSFET Transistor DKI10751FEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 72.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
dki10526.pdf
100 V, 19 A, 34.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10526 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 19 A D RDS(ON) ---------- 54.2 m max. (VGS = 10 V, ID = 9.3 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total G
dki10299.pdf
100 V, 28 A, 20.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10299 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 28 A D RDS(ON) -------- 30.0 m max. (VGS = 10 V, ID = 14.2 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat
dki10526.pdf
isc N-Channel MOSFET Transistor DKI10526FEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 54.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
dki10299.pdf
isc N-Channel MOSFET Transistor DKI10299FEATURESDrain Current I =28A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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