DKI10751 datasheet, подбор замены

 ..1. Size:369K  sanken-ele
 dki10751.pdf 

100 V, 15 A, 50.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10751 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 15 A D RDS(ON) ---------- 72.6m max. (VGS = 10 V, ID = 7.5 A) Qg --------- 6.5 nC (VGS = 4.5 V, VDS = 50 V, ID = 9.5 A) Low Total G

 ..2. Size:265K  inchange semiconductor
 dki10751.pdf 

isc N-Channel MOSFET Transistor DKI10751 FEATURES Drain Current I =15A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 72.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:369K  sanken-ele
 dki10526.pdf 

100 V, 19 A, 34.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10526 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 19 A D RDS(ON) ---------- 54.2 m max. (VGS = 10 V, ID = 9.3 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total G

 9.2. Size:369K  sanken-ele
 dki10299.pdf 

100 V, 28 A, 20.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10299 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 28 A D RDS(ON) -------- 30.0 m max. (VGS = 10 V, ID = 14.2 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat

 9.3. Size:265K  inchange semiconductor
 dki10526.pdf 

isc N-Channel MOSFET Transistor DKI10526 FEATURES Drain Current I =19A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 54.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.4. Size:266K  inchange semiconductor
 dki10299.pdf 

isc N-Channel MOSFET Transistor DKI10299 FEATURES Drain Current I =28A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose