DKI10751
MOSFET. Datasheet pdf. Equivalent
Type Designator: DKI10751
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14.7
nC
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 88
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0726
Ohm
Package:
TO-252
DKI10751
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DKI10751
Datasheet (PDF)
..1. Size:369K sanken-ele
dki10751.pdf 
100 V, 15 A, 50.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10751 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 15 A D RDS(ON) ---------- 72.6m max. (VGS = 10 V, ID = 7.5 A) Qg --------- 6.5 nC (VGS = 4.5 V, VDS = 50 V, ID = 9.5 A) Low Total G
..2. Size:265K inchange semiconductor
dki10751.pdf
isc N-Channel MOSFET Transistor DKI10751FEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 72.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:369K sanken-ele
dki10526.pdf
100 V, 19 A, 34.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10526 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 19 A D RDS(ON) ---------- 54.2 m max. (VGS = 10 V, ID = 9.3 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total G
9.2. Size:369K sanken-ele
dki10299.pdf
100 V, 28 A, 20.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10299 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 28 A D RDS(ON) -------- 30.0 m max. (VGS = 10 V, ID = 14.2 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat
9.3. Size:265K inchange semiconductor
dki10526.pdf
isc N-Channel MOSFET Transistor DKI10526FEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 54.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.4. Size:266K inchange semiconductor
dki10299.pdf
isc N-Channel MOSFET Transistor DKI10299FEATURESDrain Current I =28A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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