DMC3016LSD Datasheet. Equivalente

 ..1. Size:464K  diodes
 dmc3016lsd.pdf

DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance Device V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 16m @ VGS = 10V 8.2A Q2 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 7.3A Halogen and Antimony Free. Green Device (Not

 8.1. Size:179K  diodes
 dmc3018lsd.pdf

DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFET Case SO-8 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel 20m @ 10V Moisture Sensitivity Level 1 per J-STD-020 32m @ 4.5V Terminals Connections See Diag

 8.2. Size:1031K  cn vbsemi
 dmc3018lsd-13.pdf

DMC3018LSD-13 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 a

 9.1. Size:446K  fairchild semi
 fdmc3020dc.pdf

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

 9.2. Size:183K  diodes
 dmc3032lsd.pdf

DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 N-Channel 32m @ 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 46m @ 4.5V Moisture Sensitivity Level 1 per J-STD-020 P-Channel 39m @ 10V 53m @ 4.5V Terminals Connecti

 9.3. Size:259K  diodes
 dmc3028lsdx.pdf

DMC3028LSDX Electrical Characteristics Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS

 9.4. Size:345K  diodes
 dmc3028lsd.pdf

A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V 45m @ VGS=

 9.5. Size:182K  diodes
 dmc3021lsd.pdf

DMC3021LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 N-Channel 21m @ 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity Level 1 per J-STD-020 P-Channel 39m @ 10V 53m @ 4.5V Terminals Connecti

 9.6. Size:254K  diodes
 dmc3035lsd.pdf

DMC3035LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Complementary Pair MOSFETs Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel 35m @ 10V Moisture Sensitivity Level 1 pe

 9.7. Size:344K  diodes
 dmc3025lsd.pdf

DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-Resistance Device V(BR)DSS RDS(ON) max Package Low Input Capacitance TA = +25 C Fast Switching Speed 20m @ VGS = 10V 8.5A N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m @ VGS = 4.5V SO-8 Halogen and Antimony Free. Gr

 9.8. Size:255K  diodes
 dmc3021lsdq.pdf

DMC3021LSDQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance Device V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET 39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully

 9.9. Size:444K  diodes
 dmc3036lsd.pdf

DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFETs Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel 36m @ 10V Moisture Sensitivity Level 1 per J-STD-020D 61m @ 4.5V Terminals Connections See

 9.10. Size:387K  diodes
 dmc3021lk4.pdf

DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25 C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog

 9.11. Size:304K  panasonic
 dmc30401.pdf

DMC30401 Total pages page Tentative DMC30401 Silicon NPN epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Marking Symbol A8 Package Code SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCE